3LP04MH no. a0551-1/4 features ? 1.5v drive. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit drain-to-source voltage v dss --30 v gate-to-source voltage v gss 10 v drain current (dc) i d --200 ma drain current (pulse) i dp pw 10 m s, duty cycle 1% --800 ma allowable power dissipation p d mounted on a ceramic board (900mm 2 5 0.8mm) 0.6 w channel temperature tch 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit drain-to-source breakdown voltage v (br)dss i d =--1ma, v gs =0v --30 v zero-gate voltage drain current i dss v ds =--30v, v gs =0v --1 m a gate-to-source leakage current i gss v gs = 8v, v ds =0v 10 m a cutoff voltage v gs (off) v ds =--10v, i d =--100 m a --0.4 --1.4 v forward transfer admittance ? yfs ? v ds =--10v, i d =--100ma 190 320 ms r ds (on)1 i d =--100ma, v gs =--4v 1.8 2.4 w static drain-to-source on-state resistance r ds (on)2 i d =--50ma, v gs =--2.5v 2.4 3.4 w r ds (on)3 i d =--10ma, v gs =--1.5v 4.5 9.0 w input capacitance ciss v ds =--10v, f=1mhz 35 pf output capacitance coss v ds =--10v, f=1mhz 7.2 pf reverse transfer capacitance crss v ds =--10v, f=1mhz 2.1 pf turn-on delay time t d (on) see specified test circuit. 75 ns rise time t r see specified test circuit. 170 ns turn-off delay time t d (off) see specified test circuit. 550 ns fall time t f see specified test circuit. 350 ns marking : qd continued on next page. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : ena0551 n0806pe sy im tc-00000230 any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. 3LP04MH p-channel silicon mosfet general-purpose switching device applications
3LP04MH no. a0551-2/4 continued from preceding page. ratings parameter symbol conditions min typ max unit total gate charge qg v ds =--10v, v gs =--4v, i d =--200ma 0.58 nc gate-to-source charge qgs v ds =--10v, v gs =--4v, i d =--200ma 0.17 nc gate-to-drain miller charge qgd v ds =--10v, v gs =--4v, i d =--200ma 0.12 nc diode forward voltage v sd i s =--200ma, v gs =0v --0.89 --1.2 v package dimensions switching time test circuit unit : mm (typ) 7019a-003 1 : gate 2 : source 3 : drain sanyo : mcph3 0.25 0.25 0.07 2.1 1.6 2.0 0.65 0.3 0.85 0.15 12 3 0 to 0.02 pw=10 m s d.c. 1% p. g 50 w g s d i d = --100ma r l =150 w rg v dd = --15v v out 3LP04MH v in 0v --4v v in rg=5k w i d -- v ds i d -- v gs drain-to-source voltage, v ds -- v drain current, i d -- ma gate-to-source voltage, v gs -- v r ds (on) -- v gs r ds (on) -- ta static drain-to-source on-state resistance, r ds (on) -- w gate-to-source voltage, v gs -- v static drain-to-source on-state resistance, r ds (on) -- w ambient temperature, ta -- c drain current, i d -- ma it11700 it11701 it11698 it11699 --0.1 -- 1 0 2 0 --0.5 0 0 0 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 --100 --80 --60 --40 --20 --200 --180 --160 --140 --120 -- 8.0v -- 6.0v -- 5.0v -- 4.0v -- 2.5v -- 2.0v v gs = -- 1.5v --250 --200 --150 --100 --50 --300 --1.0 --1.5 --2.0 --2.5 --3.0 ta= --25 c --25 c 25 c 25 c ta=75 c 75 c v ds = --10v -- 2 -- 3 -- 4 -- 5 -- 6 -- 7 -- 8 4 6 8 9 1 3 5 7 10 ta=25 c --10ma --50ma i d = --100ma --40 --60 --20 0 20 40 60 80 100 120 160 140 1 0 2 3 4 5 6 7 i d = --50ma, v gs = --2.5v i d = --10ma, v gs = --1.5v i d = --100ma, v gs = --4.0v
3LP04MH no. a0551-3/4 p d -- ta ambient temperature, ta -- c allowable power dissipation, p d -- w v gs -- qg sw time -- i d ciss, coss, crss -- v ds ? y fs ? -- i d i s -- v sd drain current, i d -- ma switching time, sw time -- ns drain current, i d -- ma forward transfer admittance, ? y fs ? -- ms diode forward voltage, v sd -- v source current, i s -- ma drain-to-source voltage, v ds -- v ciss, coss, crss -- pf total gate charge, qg -- nc gate-to-source voltage, v gs -- v a s o drain-to-source voltage, v ds -- v drain current, i d -- a 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 --4.0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 it11706 0 --30 --10 --15 --20 --25 -- 5 it11705 --10 --100 23 5 723 5 7 1.0 7 10 5 3 2 7 100 5 3 2 it11704 it11703 it11702 --1.0 100 10 --10 23 57 --100 22 357 357 --1000 7 5 3 2 1000 7 5 3 2 --0.8 --1.0 --0.6 --1.2 --1.4 --0.2 --0.4 0 --1.0 --100 --10 7 5 3 2 7 5 3 2 --1000 7 5 3 2 t f t r crss coss ciss v ds = --10v i d = --200ma v ds = --10v ta= --25 c 75 c 25 c 100 1000 7 5 7 5 3 2 2 v gs =0v f=1mhz 25 c --25 c ta= 75 c t d (off) t d (on) v ds = --15v v gs = --4v 0 0 20 40 60 80 100 120 0.1 0.2 0.3 0.7 0.6 0.5 0.4 140 160 it11708 it11707 --0.1 --1.0 --10 23 57 23 57 23 5 --1.0 --0.01 --0.1 2 3 5 7 2 3 5 7 2 100ms dc operation (ta=25 c) 10ms i dp = --800ma i d = --200ma 10 m s 1ms mounted on a ceramic board (900mm 2 5 0.8mm) operation in this area is limited by r ds (on). ta=25 c single pulse mounted on a ceramic board (900mm 2 5 0.8mm)
3LP04MH no. a0551-4/4 specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. note on usage : since the 3LP04MH is a mosfet product, please avoid using this device in the vicinity of highly charged objects. ps this catalog provides information as of november, 2006. specifications and information herein are subject to change without notice.
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